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| VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 4000 4140 6500 46x103 0.905 0.109 V A A A V m Rectifier Diode 5SDD 40H4000 Doc. No. 5SYA1176-00 March 05 * Very low on-state losses * Optimum power handling capability Blocking Maximum rated values 1) Parameter Repetitive peak reverse voltage Non - repetitive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = -40...160C f = 5 Hz, tp = 10ms, Tj = -40...160C Value 4000 4000 Unit V V Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 160C min typ max 100 Unit mA Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 45 typ 50 max 55 50 100 Unit kN m/s m/s 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 50 kN, Ta = 25 C min 25.5 40 typ 0.9 max 26.5 Unit kg mm mm mm Air strike distance Da 20 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 40H4000 On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t tp = 8.3 ms, Tj = 160C, VR = 0 V tp = 10 ms, Tj = 160C, VR = 0 V 50 Hz, Half sine wave, TC = 85 C min typ max 4140 6500 46x10 3 Unit A A A A2s A A2s 10.58x10 49x10 6 3 10.02x10 6 Characteristic values Parameter On-state voltage Threshold voltage Slope resistance Symbol Conditions VF V(T0) rT IF = 4000 A, Tj = 160C Tj = 160C IT = 6000...19000 A min typ max 1.310 0.905 0.109 Unit V V m Switching Characteristic values Parameter Symbol Conditions Qrr diF/dt = -30 A/s, VR = 100 V IFRM = 2000 A, Tj = 160C min typ 4600 max Unit As Recovery charge ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1176-00 March 05 page 2 of 7 5SDD 40H4000 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 160 160 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 45...55 kN Anode-side cooled Fm = 45...55 kN Cathode-side cooled Fm = 45...55 kN Double-side cooled Fm = 45...55 kN Single-side cooled Fm = 45...55 kN typ max 8 14.5 18.0 2.5 5.0 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = R th i (1 - e-t/ i ) i =1 i Rth i(K/kW) i(s) 1 4.533 0.4406 2 2.255 0.1045 3 0.868 0.0092 4 0.345 0.0022 Fig. 1 Transient thermal impedance junction-tocase. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1176-00 March 05 page 3 of 7 5SDD 40H4000 20000 IF ( A ) T j = 25 C 18000 16000 14000 12000 10000 8000 6000 4000 2000 0 0 1 2 3 160 C VF (V) 4 Fig. 2 Max. on-state characteristics. 100 20 IFSM ( kA ) 50 i 2dt (106 A2s) IFSM ( kA ) 40 i2dt 80 15 30 VR = 0 V 20 60 10 40 5 10 I FSM V R 0.5 V RRM 20 1 10 t ( ms ) 0 100 0 1 10 100 Number n of cycles at 50 Hz Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V Fig. 4 Surge forward current vs. number of pulses. Half sine wave, VR = 0 V ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1176-00 March 05 page 4 of 7 5SDD 40H4000 PT ( W ) = 60 120 180 PT ( W ) 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1000 2000 10000 = 30 9000 60 90 120 180 270 DC 8000 DC 7000 6000 5000 4000 3000 2000 1000 0 3000 4000 5000 I FAV ( A ) 0 1000 2000 3000 4000 5000 I FAV ( A ) Fig. 5 Forward power loss vs. average forward current, sine waveform, f = 50 Hz TC ( C ) 160 Fig. 6 Forward power loss vs. average forward current, square waveform, f = 50 Hz TC ( C ) DC 160 140 140 120 120 100 100 DC 270 80 80 60 0 1000 = 60 2000 120 3000 180 60 4000 5000 0 = 30 1000 60 90 3000 120 4000 180 5000 2000 I FAV ( A ) I FAV ( A ) Fig. 7 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz Fig. 8 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1176-00 March 05 page 5 of 7 5SDD 40H4000 7000 Q rr (C) maxim um 500 IrrM (A) 400 m inimum 5000 300 4000 m ax. 200 3000 m inim um 6000 average avg. 2000 0 20 40 60 - di F /dt (A/s) 100 0 20 40 60 - di F /dt (A/s) Fig. 9 Reverse recovery charge vs. dIF/dt, IF = 2000 A, VR = 100 V, Tj = Tjmax, limit values Fig. 10 Peak reverse recovery current vs. diF/dt, IF = 2000 A, VR = 100 V, Tj = Tjmax, limit values ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1176-00 March 05 page 6 of 7 5SDD 40H4000 Fig. 11 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr 5SYA 2020 5SYA 2029 5SYA 2036 Titel Design of RC-Snubbers for Phase Control Applications Designing Large Rectifiers with High Power Diodes Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1176-00 March 05 |
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